|
Project Title |
Investigators |
Sponsoring Agency |
Duration |
|
Surface Modification by Plasma Source Ion Implantation (i) To
reduce high temperature corrosion in metals, (ii) To improve
adhesion of metal films on Semiconductors |
Prof. P.J. George
Dr. Anil Vohra
Dr. Dinesh Kumar |
DST |
3 Years |
|
Design & fabrication of a PECVD system for a-Si:H thin film
transistors. |
Prof. P.J. George
Dr. Anil Vohra |
AICTE |
3 Years |
|
Plasma Source Ion Implantation of Nitrogen in Sillicon MOS devices |
Dr. Dinesh Kumar
Dr. P.J. George
Dr. B.Prasad |
UGC |
3 Years |
|
Design of Digital internal Communication System |
Dr. Anil Vohra |
UGC |
2 Years |
|
Pinning Parameters in NbTa Superconducting thin films |
Dr. Dinesh Kumar |
UGC |
2 Years |
|
Fabrication of InAs Based MOSFET Devices |
Dr. Dinesh Kumar |
UGC |
2 Years |
|
Fabrication & Properties of a-Si:H based thin film transistors |
Mr. B.S. Satyanarayan |
UGC |
2 Years |
|
Fabrication of various M-S contacts |
Ms. Anurekha Sharma |
UGC |
2 years |
|
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